s m d ty p e s m d ty p e m o s f e t 1 w w w . k e x i n . c o m . c n p-channel m osfet SIS2305PLT1G absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in-source voltage v ds -8 v gate-source voltage v gs 8 v continuo us drain current t a =25 -- t a =70 i d -3.5 -2.8 a pulsed drain current i dm -12 a pow er dissi pation t a =25 -- t a =70 p d 1.25 0.8 w thermal resi st ance.junct ion-to-ambient r ja 130 /w oper ating juncti on and storage tem pera ture rang e t j ,t stg -55 to +150 features v ds (v) = -8v r ds(on ) 0.052 (v gs = -4.5v) r ds(on) 0.071 (v gs = -2.5v) r ds(on) 0.108 (v gs = -1.8v) g d s 1 . g a t e 2 . s o u r c e 3 . d r a i n 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01
s m d ty p e 2 s m d ty p e w w w . k e x i n . c o m . c n m o s f e t el ectrical characteristics t a = 2 5 parameter sym bol testc onditions min typ ma x unit dra in-source bre akdow n voltage v dss v gs = 0 v , i d = -250 a -8 v gate threshold voltag e v gs(th) v ds = v gs , i d = -250 a -0.45 v v ds = -6.4 v , v gs = 0 v -1 v ds = -6.4 v , v gs = 0 v , t j = 55 -10 gate-bo dy leakage i gss v ds = 0 v , v gs = 8 v 100 na v gs = -4.5 v , i d = -3.5 a 0.044 0.052 v gs = -2.5 v , i d = -3.0 a 0.060 0.071 v gs = -1.8 v , i d = -2.0 a 0.087 0.108 v ds -5 v, v gs = -4.5 v -6 v ds -5 v, v gs = -2.5 v -3 forw ard tran sc ondu ct ance g fs v ds = -5 v, i d = -3.5 a 8.5 s input c apacitance * c i ss 1245 output capacit ance * c oss 375 rev erse transfer capacit ance * c rss 210 total gate c harg e * q g 10 15 gate-sour ce c harg e * q gs 2 gate-dr ain charge * q gd 2 turn- on dela y tim e t d(on ) 13 20 turn- on reise ti m e t r 25 40 turn- off dea ly ti m e t d(of f) 55 80 turn- off fall t im e t f 19 35 con tinuous s ource curren t (diode conduction) * i s -1.6 a diode forw ard v oltage v sd i s = -1.6 a , v gs = 0 v -1.2 v * puls e test : p w 300 s duty cycle 2%. on-state drain curren t i d(on) zero ga te voltage dra in current i dss a dra in-source on- st ate resist ance r ds(on) a ns v ds = -4v , v gs = -4.5 v , i d = -3.5 a v ds = -4v , v gs = 0 , f = 1 mhz v dd = -4v , r l = 4 , i d = -1a , v gen =- 4.5v , r g = 6 pf nc mark ing mar king a5* -0.8 p-channel m osfet SIS2305PLT1G
s m d ty p e 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 0 0.05 0.10 0.15 0.20 0.25 0.30 0 2 4 6 8 10 12 0 2 4 6 8 10 12 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 0 2 4 6 8 10 0.6 0.8 1.0 1.2 1.4 ?50 ?25 0 25 50 75 100 125 150 0 400 800 1200 1600 2000 0 2 4 6 8 v g s = 4.5 thru 2.5 v 25 c t c = ?55 c c r s s c os s c i s s v d s = 4 v i d = 3.5 a v g s = 4.5 v i d = 3.5 a v g s = 4.5 v v g s = 2.5 v 1, 0.5 v 125 c 1.5 v s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d ? gate-to-source v oltage (v) q g ? t o ta l ga te cha r g e ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction t emperature ( c) (normalized) ? on-resistance ( r ds(on) ) v g s = 1.8 v 2 v s m d ty p e m o s f e t 3 w w w . k e x i n . c o m . c n t y pical ch aracteristics b b b $ $ b p-channel m osfet SIS2305PLT1G
s m d ty p e s m d ty p e m o s f e t 4 w w w . k e x i n . c o m . c n ?0.2 ?0.1 0.0 0.1 0.2 0.3 0.4 ?50 ?25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 0.1 10 30 i d = 3.5 a 0.01 0 1 6 12 2 4 10 500 0.1 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold v oltage v ariance (v) v gs(th) t j ? t emperature ( c) power (w) e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s single pulse power ? on-resistance ( r ds(on) ) v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t ime (sec) 8 10 normalized thermal t ransient impedance, junction-to-ambient squar e w ave pulse duration (sec) normalized ef fective t ransient thermal impedance 2 1 0.1 0.01 10 ?3 10 ?2 0 0 5 0 1 1 10 ?1 10 ?4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r t hj a = 130 c/w 3. t j m ? t a = p d m z t hj a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 100 t a = 25 c 1 b b b b b $ ty pic al c har ac t er is it ic s p-channel m osfet SIS2305PLT1G
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